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| Datasheet File OCR Text: |
| to-25 2 -2l plastic-encapsulate transistors 3CA753 transistor (pnp) features power d issipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 1.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-40v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-2v,i c =-500ma 100 400 v ce(sat) i c =-2a,i b =-200ma -0.8 v collector-emitter saturation voltage v ce(sat) i c =-1.5a,i b =-30ma -2 v transition frequency f t v ce =-5v,i c =-500ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 13 pf classification of h fe rank o y g range 100-200 160-320 200-400 marking to-25 2 -2l 1.base 2.collector 3.emitter 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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